Structure and Properties of Hexagonal Boron Nitride Industry
Hexagonal boron nitride (h-BN) has a layered hexagonal structure similar to graphite, with alternating boron and nitrogen atoms arranged in a honeycomb lattice within each atomic layer. However, instead of weak van der Waals forces, the ionic and covalent bonds between boron and nitrogen atoms make the bonding between layers much stronger in h-BN. This gives h-BN unique properties that make it very different from graphite despite their similar structures.
The ionic-covalent bonds lead to extreme hardness, high thermal conductivity and electrical insulation properties. Each boron atom is covalently bonded to three adjacent nitrogen atoms in a triangular pattern and vice versa, forming strong in-plane sp2 bonds. The coordination number between boron and nitrogen is unusually high for an ionic bond. This combination of ionic and covalent bonding characteristics gives h-BN high mechanical strength, thermal stability and electrically insulating properties.
The layers slide very easily against one another due to weak van der Waals forces between layers. This makes h-BN a solid lubricant with a low coefficient of friction. Its layered structure also allows for easy exfoliation into atomically thin 2D Hexagonal Boron Nitride nanosheets. The combination of advanced properties and ease of exfoliation has propelled h-BN into new and rapidly growing markets.
Rising Demand in Semiconductors and Hexagonal Boron Nitride Industry
One of the largest growth areas for h-BN is in semiconductor and electronics applications where its unique insulating and thermally conductive properties are highly valuable. h-BN is increasingly used as an ingredient in the manufacture of semiconductors due to its electrical insulation, high thermal conductivity and ability to act as an atomically thin barrier or tunneling layer.
For advanced nanoelectronics, h-BN has become a critical material for making two-dimensional heterostructures by alternating layers of graphene and h-BN. These “van der Waals heterostructures” allow for new types of devices with enhanced properties. h-BN is also finding applications as an insulating substrate for graphene devices as it provides an ideal surface that preserves graphene’s intrinsic properties and electron mobility better than silicon dioxide.
The electronics industry’s move to three-dimensional chip stacking with through-silicon vias (TSVs) is another major opportunity for h-BN. It is being investigated as a replacement for conventional dielectrics and polymers used in TSVs due to its superior thermal conductivity, insulating properties, and ability to serve as a barrier diffusion layer. This protects active devices and conducting pathways.
The Rising Demand for 2D Materials Beyond Graphene
While graphene remains the most extensively researched two-dimensional material, various nanosheet forms of h-BN are emerging as another very important class of 2D material with wide-ranging applications. As the research into 2D material properties and potential applications progresses, the diversity of nanosheet forms of h-BN, metal dichalcogenides and other layered compounds is being uncovered.
Sheets of h-BN only a few atoms thick are prized for their intriguing physical, optical and chemical properties. When peeled into single or few-layer nanosheets, h-BN retains its interesting combination of chemical inertness, electrical insulation and high thermal conductivity at the ultimate 2D limit. This makes it valuable as a substrate, dielectric, diffusion barrier material and thermal management component at the nanoscale.
The expanded use of 2D h-BN nanosheets is driven by their compatibility with other 2D materials in developing sophisticated vertical and lateral heterostructures. These van der Waals assemblies allow for tailoring material properties and functionalities. The cleaving of h-BN into atomically thin sheets also makes it suitable as an additive or filler at the ultimate 2D scale for applications like protective thin films, composites and thermal interface materials.
The Global Market is Rapidly Expanding
The global market for h-BN powders, coatings, and composites has been growing steadily as applications in areas like refractories, lubricants and polymers increase. However, the market is poised for much stronger growth driven by new high-tech applications of h-BN in areas such as semiconductors, electronics, optics and 2D materials.
Global demand is expected to increase substantially in the coming years with projected market sizes ranging from $85-$120 million by 2025. Regionally, Asia Pacific currently dominates production and consumption due to large electronics manufacturing bases in China, South Korea and other countries. However, North America and Europe are experiencing rising demand from expanding research and use of 2D materials.
Given the escalating interest in h-BN from both research and manufacturing perspectives, sources project market growth rates of 15-25% over the next 5-7 years. This tremendous growth outlook highlights h-BN’s rising prominence as a new class of advanced crystalline inorganic material Finding expanding use in next-generation technologies reliant on materials with tailored properties at the 2D scale.
Applications Push The Need For New Production Methods
While h-BN can be produced through multiple methods, scaling up production to meet rapidly growing demand poses technological challenges. Conventional high-pressure high-temperature synthesis methods can produce h-BN but are energy-intensive and limited in throughput. Newer techniques under development include chemical vapor deposition (CVD), plasma-assisted deposition and ball milling/exfoliation to more easily control layer structures, thickness and crystallinity.
Production of h-BN in wafer, thin film and 2D nanosheet forms requires precise control over nucleation, growth and separation of atomic layers. Significant research efforts are dedicated to optimizing CVD and other non-equilibrium deposition routes able to produce high-quality crystalline h-BN at lower temperatures, higher growth rates and over larger areas compatible with industrial fabrication needs. Continuous flux processes also aim to improve yield and simplify scalability.
In Summary, as the global market grows, ramping up mass production capacity through optimized industrial-scale synthesis will be critical to satisfying diverse application requirements. Both manufacturing technology advances and further development of h-BN’s application portfolio will be important drivers propelling its ongoing commercialization and integration into key advance
Get more insights on this topic: https://www.dailyprbulletin.com/hexagonal-boron-nitride-industry-a-versatile-material-with-wide-range-of-industrial-applications/
About Author:
Ravina Pandya, Content Writer, has a strong foothold in the market research industry. She specializes in writing well-researched articles from different industries, including food and beverages, information and technology, healthcare, chemical and materials, etc. (https://www.linkedin.com/in/ravina-pandya-1a3984191)